型号:

IDT71V25761YSA183BGI

RoHS:
制造商:IDT, Integrated Device Technology Inc描述:IC SRAM 4MBIT 183MHZ 119BGA
详细参数
数值
产品分类 集成电路 (IC) >> 存储器
IDT71V25761YSA183BGI PDF
产品变化通告 Product Discontinuation 05/Nov/2008
标准包装 84
系列 -
格式 - 存储器 RAM
存储器类型 SRAM - 同步
存储容量 4.5M(128K x 36)
速度 183MHz
接口 并联
电源电压 3.135 V ~ 3.465 V
工作温度 -40°C ~ 85°C
封装/外壳 119-BGA
供应商设备封装 119-PBGA(14x22)
包装 托盘
其它名称 71V25761YSA183BGI
相关参数
MLF1608DR22K TDK Corporation INDUCTOR MULTILAYER 0.22UH 0603
T95R226K035EZAL Vishay Sprague CAP TANT 22UF 35V 10% 2824
NCV317MBDTRKG ON Semiconductor IC REG LDO ADJ .5A DPAK
VJ0805A101KXAAT Vishay Vitramon CAP CER 100PF 50V 10% NP0 0805
N-1250SCRLF4 Sanyo Energy BATT PACK 4.8V 1200MAH NICAD
2-583715-9 TE Connectivity CONN CARDEDGE 31DL POS SLD GOLD
KA78R15CTU Fairchild Semiconductor IC REG LDO 15V 1A TO-220F-4
TCJA226M006R0300 AVX Corporation CAP TANT 22UF 6.3V 20% 1206
BYW98-200RL STMicroelectronics DIODE FAST REC 200V 3A DO-201AD
T95R187M6R3EZAL Vishay Sprague CAP TANT 180UF 6.3V 20% 2824
MLF1608DR22K TDK Corporation INDUCTOR MULTILAYER 0.22UH 0603
IDT71V25761YSA183BG8 IDT, Integrated Device Technology Inc IC SRAM 4MBIT 183MHZ 119BGA
LP2982AIM5X-3.3/NOPB National Semiconductor IC REG LDO 3.3V 50MA SOT23-5
BYW98-200RL STMicroelectronics DIODE FAST REC 200V 3A DO-201AD
1N4937-TP Micro Commercial Co DIODE FAST REC 1A 600V DO-41
LP2982AIM5X-5.0/NOPB National Semiconductor IC REG LDO 5V 50MA SOT23-5
T95R187K6R3EZAL Vishay Sprague CAP TANT 180UF 6.3V 10% 2824
2-583715-8 TE Connectivity CONN CARDEDGE 30DL POS SLD GOLD
N-1250SCRLL2X2 Sanyo Energy BATT PACK 4.8V 1200MAH NICAD
STTA106U STMicroelectronics DIODE ULT FAST 600V 1A SMB